Using TOF-SIMS Spectrometry to Study the Kinetics of the Interfacial Retro Diels-Alder Reaction
Lilia Hassouna1,2, Sachin Kumar Enganati1,2, Florence Bally-Le Gall3
1Materials and Research Technology Department, Luxembourg Institute of Science and Technology, 5 Avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg.
Abstract:
In this work, the use of Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) was explored as a technique for monitoring the interfacial retro Diels-Alder (retro DA) reaction occurring on well-controlled self-assembled monolayers (SAMs). A molecule containing a Diels-Alder (DA) adduct was grafted on to the monolayers, then the surface was heated at different temperatures to follow the reaction conversion. A TOF-SIMS analysis of the surface allowed the detection of a fragment from the molecule, which is released from the surface when retro DA reaction occurs. Hence, by monitoring the decay of this fragment's peak integral, the reaction conversion could be determined in function of the time and for different temperatures. The viability of this method was then discussed in comparison with the results obtained by 1H NMR spectroscopy.
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