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Updated: Nov 3, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference

Su-In Yi1,2, Jungsik Kim3,4

  • 1Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, USA.

Micromachines
|June 2, 2021
PubMed

Keywords:
NAND flash memoryTechnology Computer Aided Design (TCAD) simulationdisturbanceinterferencenon-volatile memory (NVM)program

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