Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator.

Area of Science:

• Semiconductor device physics
• Quantum transport phenomena
• Computational electronics

Background:

• Simulations of ultrascaled devices using multi-scale electrostatic modeling (MS-EMC) often overestimate current levels in the subthreshold regime.
• This inaccuracy hinders the precise analysis and design of modern electronic components.

Purpose of the Study:

• To address and correct the overestimation of current levels in the subthreshold regime for ultrascaled devices simulated with MS-EMC.
• To enhance the predictive capabilities of MS-EMC by proposing and evaluating self-consistent solutions.

Main Methods:

• Two distinct self-consistent solutions were investigated: 1) Reformulating tunneling probability computation by modulating the Wentzel-Kramers-Brillouin (WKB) approximation. 2) Implementing a change in the current calculation technique utilizing the Landauer formalism.
• The results obtained from both proposed methods were rigorously compared and contrasted with non-equilibrium Green's function (NEGF) results generated by the NESS simulator.

Main Results:

• Both proposed methods demonstrated improvements in addressing the subthreshold current overestimation.
• The modification of the current calculation technique based on the Landauer formalism showed superior performance and accuracy compared to the WKB approximation modulation.

Conclusions:

• The current computation modification using the Landauer formalism is identified as the most suitable and advisable strategy for enhancing the MS-EMC tool.
• This improvement is crucial for accurate simulation of ultrascaled devices, particularly in the critical subthreshold regime.