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High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
Raquel Fernández de Cabo1, David González-Andrade1, Pavel Cheben2
1Instituto de Óptica Daza de Valdés, Consejo Superior de Investigaciones Científicas (CSIC), 28006 Madrid, Spain.
Nanomaterials (Basel, Switzerland)
|June 2, 2021
Summary
This study introduces a novel Y-junction power splitter for silicon photonics utilizing subwavelength metamaterials. The new design significantly reduces power loss across a broad bandwidth, overcoming limitations of traditional splitters.
Area of Science:
- Photonics
- Integrated Circuits
- Materials Science
Background:
- Efficient power splitting is crucial for silicon photonic integrated circuits.
- Traditional Y-junctions face limitations in bandwidth, fabrication tolerance, and footprint.
- Fundamental mode losses occur in conventional Y-junctions due to fabrication resolution limits.
Purpose of the Study:
- To propose and validate a high-performance Y-junction power splitter.
- To overcome the limitations of existing power-division architectures.
- To leverage subwavelength metamaterials for improved performance.
Main Methods:
- Full three-dimensional simulations were performed.
- Optimization was conducted for specific fabrication resolutions (50 nm and 100 nm).
- Fabrication tolerances were analyzed, and a proof-of-concept device was experimentally validated.
Main Results:
- Simulations show fundamental mode excess loss below 0.1 dB over a 300 nm bandwidth (1400-1700 nm) for 50 nm resolution.
- Extended bandwidth of 350 nm (1350-1700 nm) with <0.3 dB loss for 100 nm resolution.
- Experimental results demonstrated <0.2 dB excess loss in a 195 nm bandwidth for 50 nm resolution.
Conclusions:
- The proposed subwavelength metamaterial Y-junction offers ultra-broadband, low-loss power splitting.
- The design exhibits robust performance against fabrication errors.
- This advancement holds promise for next-generation silicon photonic integrated circuits.

