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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Characteristics of MOSFET01:17

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Characteristics of JFET01:21

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Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors.

Chen Chong1, Hongxia Liu1, Shulong Wang1

  • 1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|June 2, 2021
PubMed
Summary

T-shaped gate tunneling field-effect transistors (TGTFET) show increased sensitivity to heavy-ion radiation, with tunneling junctions being the most vulnerable. This research guides the development of radiation-hardened TFET devices.

Keywords:
T-shaped gate tunneling field-effect transistors (TGTFET)fully depleted silicon on insulator (FDSOI)linear energy transfer (LET)single-event effect (SEE)tunneling field-effect transistors (TFETS)

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Area of Science:

  • Semiconductor device physics
  • Radiation effects in electronics

Background:

  • Tunneling field-effect transistors (TFETs) offer low power consumption due to their sub-60 mV/decade subthreshold swing, achieved via band-to-band tunneling (BTBT).
  • T-shaped gate tunneling field-effect transistors (TGTFETs) are designed with double sources and T-shaped gates to boost on-state current and tunneling probability.

Purpose of the Study:

  • To investigate the effects of heavy-ion irradiation on TGTFETs for the first time.
  • To analyze the sensitivity of TGTFETs to single-event effects (SEE) compared to other technologies like FDSOI.
  • To identify the most radiation-sensitive regions within the TGTFET structure.

Main Methods:

  • Technology Computer-Aided Design (TCAD) simulations were employed to model TGTFET behavior under heavy-ion irradiation.
  • Simulations were performed varying drain bias and Linear Energy Transfer (LET) levels.
  • Heavy-ion strikes were simulated at different locations within the TGTFET device.

Main Results:

  • Transient current and collected charge in TGTFETs increase with higher drain bias and LET.
  • At LET = 100 MeV·cm²/mg and Vd = 0.5 V, the transient current reached 10.63 mA, significantly exceeding the on-state current.
  • The tunneling junction was identified as the most sensitive region to SEE in TGTFETs.

Conclusions:

  • TGTFETs exhibit higher sensitivity to single-event effects (SEE) compared to FDSOI devices.
  • The tunneling junction is the critical area for SEE vulnerability in TGTFETs.
  • Findings provide crucial insights for developing radiation-hardened TFET-based electronic devices.