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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Electrical tuning of optically active interlayer excitons in bilayer MoS2
Namphung Peimyoo1, Thorsten Deilmann2, Freddie Withers1
1Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, UK.
Interlayer excitons in bilayer MoS2 are electrically controlled up to room temperature. This work demonstrates tunable interlayer exciton energies and large oscillator strengths in MoS2, paving the way for novel excitonic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Interlayer (IL) excitons in 2D semiconductors offer potential for room-temperature devices.
- Previous designs using type-II heterobilayers faced limitations in oscillator strength and large-area fabrication.
- Recent studies confirmed IL excitons in bilayer MoS2.
Purpose of the Study:
- To demonstrate electrical control of interlayer excitons in bilayer MoS2 up to room temperature.
- To investigate the tunability of IL exciton energies and oscillator strengths via electric fields.
- To explore the potential for large-area, homogeneous control of IL excitons.
Main Methods:
- Utilized bilayer MoS2 structures for studying interlayer excitons.
- Applied electric fields perpendicular to the crystal plane to manipulate exciton energies.
- Analyzed exciton behavior through optical spectroscopy, observing field-dependent peak splitting.
Main Results:
- Demonstrated electrical control of IL excitons in bilayer MoS2 at room temperature.
- Observed preservation of large oscillator strengths for IL excitons under electric field tuning.
- Identified an X-shaped field dependence in exciton peaks, confirming monolayer band shifts.
- Achieved homogeneous control over IL exciton energies across large device areas.
Conclusions:
- Bilayer MoS2 supports electrically tunable IL excitons with significant oscillator strength at room temperature.
- The observed phenomena are attributed to the mixing of IL excitons with intralayer excitons.
- This work enables precise control over IL exciton energies, crucial for developing advanced excitonic devices.
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