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Codoping induced enhanced ferromagnetism in diluted magnetic semiconductors
Antonis N Andriotis1, Madhu Menon2,3
1Institute of Electronic Structure and Laser, FORTH, PO Box 1527, 71110 Heraklio, Crete, Greece.
Defect-induced magnetism in diluted magnetic semiconductors and transition metal oxides is engineered through doping. This review highlights defect magnetism, exploring its local and holistic effects on magnetic coupling for novel material properties.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Magnetism
Background:
- Experimentally observed d0-magnetism is attributed to structural and topological defects.
- Doping and codoping are key methods for engineering magnetic properties in diluted magnetic semiconductors (DMSs) and transition metal oxides (TMOs).
Purpose of the Study:
- To review the fundamental characteristics of defect magnetism across various systems.
- To emphasize the local, holistic, and synergistic responses of host materials to doping.
- To investigate the role of doping in developing magnetic coupling (MC) among magnetic dopants.
Main Methods:
- Review of experimental and theoretical studies on defect-induced magnetism.
- Analysis of ab initio computational results to elucidate local and holistic aspects of MC.
- Comparison with magnetic multilayer systems.
Main Results:
- Defect magnetism is observed in diverse DMSs and TMOs.
- Ab initio calculations reveal charge and spin transfers influencing MC.
- Doping shifts d- and p-band centers, impacting material properties.
Conclusions:
- Magnetic coupling is explained by new successive spin polarization and defect-induced defect-mediated models.
- These models introduce novel contributions to MC, competing with classical mechanisms.
- Similarities between codoped DMSs/TMOs and magnetic multilayers support the proposed models.
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