An Interface Optimization Strategy for g-C₃N₄-Based S-Scheme Heterojunction Photocatalysts.

Area of Science:

• Materials Science
• Photocatalysis
• Surface Chemistry

Background:

• Graphitic carbon nitride (CN) exhibits promising photocatalytic properties due to its electronic band structure.
• Photocatalyst activity is often limited by the rapid recombination of photogenerated charge carriers.
• Heterojunctions improve CN photocatalysis, but interface properties are frequently overlooked.

Purpose of the Study:

• To optimize the interface structure of CN-based heterojunctions through morphology engineering.
• To investigate the impact of interface optimization on photocatalytic activity.
• To demonstrate a universal strategy for enhancing heterojunction photocatalysts.

Main Methods:

• Morphology engineering of the CN component in heterojunctions.
• Fabrication of CeO2/CN, Al2O3/CN, and Fe2O3/CN heterostructures.
• Photocatalytic degradation experiments using rhodamine B as a model pollutant.
• Analysis of interface properties, including S-scheme heterojunction formation, interface area, and contact resistance.

Main Results:

• Interface-optimized CeO2/CN showed over 20% higher photocatalytic activity compared to traditional CeO2@CN.
• Optimized interfaces facilitated an S-scheme heterojunction structure, enhancing charge separation.
• Increased interface area and reduced contact resistance improved carrier migration efficiency.
• Consistent improvements were observed for Al2O3/CN and Fe2O3/CN heterojunctions, confirming the strategy's universality.

Conclusions:

• Morphology engineering is an effective strategy for optimizing CN-based heterojunction interfaces.
• Optimized interfaces significantly enhance photocatalytic performance by improving charge carrier dynamics.
• This approach offers a universal method for boosting the activity of various heterojunction photocatalysts.