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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Graphene-Ta2O5 heterostructure enabled high performance, deep-ultraviolet to mid-infrared photodetection
Vinh X Ho1, Yifei Wang1, Michael P Cooney2
1Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, VA 24061, USA. vinh@vt.edu.
This study presents novel, low-cost photodetectors with high sensitivity and ultrafast response across the deep-ultraviolet to mid-infrared spectrum. These devices utilize a hybrid graphene-semiconductor structure for practical optoelectronic applications.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Developing room-temperature, broadband photodetectors is challenging due to limitations of traditional semiconductors.
- Existing hybrid photodetectors often face constraints in spectral bandwidth and response time.
Purpose of the Study:
- To demonstrate a high-performance photodetector with sensitivity from deep-ultraviolet to mid-infrared.
- To achieve high sensitivity and ultrafast response times in a cost-effective device.
Main Methods:
- Fabrication of a hybrid photodetector by coupling graphene with a p-type semiconductor, nitrogen-doped tantalum pentoxide (N-Ta2O5) thin film.
- Utilizing the unique properties of the 2D heterostructure for rapid hole transfer and recirculation.
Main Results:
- Achieved broadband detection from deep-ultraviolet to mid-infrared.
- Demonstrated high photo-responsivity (up to 3.0 × 10^6 A/W).
- Exhibited ultrafast rise time (< 20 ns) and high specific detectivity (up to ~2.2 × 10^12 Jones).
Conclusions:
- The developed hybrid photodetector offers a promising solution for high-performance optoelectronics.
- The graphene-N-Ta2O5 heterostructure enables efficient charge transfer for enhanced photodetector performance.
- This approach facilitates cost-effective, practical broadband photodetector applications.
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