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Updated: Nov 2, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton-Electron Coupling Effect in a
Dong-Gyu Jin1, Seung-Hwan Kim1, Seung-Geun Kim2
1School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Korea.
Abstract:
Presently, the 3-terminal artificial synapse device has been in focus for neuromorphic computing systems owing to its excellent weight controllability. Here, an artificial synapse device based on the 3-terminal solid-state electrolyte-gated transistor is proposed to achieve outstanding synaptic characteristics with a human-like mechanism at low power. Novel synaptic characteristics are accomplished by precisely tuning the threshold voltage using the proton-electron coupling effect, which is caused by proton migration inside the electrolyte. However, these synaptic characteristics are degraded because traps at the interface of channel/electrolyte disturb the proton-electron coupling effect. To minimize degradation, the oxygen plasma treatment is performed to reduce interface traps. As a result, symmetric weight updates and outstanding synaptic characteristics are achieved. Furthermore, high repeatability and long-term plasticity are observed at low operating power, which is essential for artificial synapses. Therefore, this study shows the progress of artificial synapses and proposes a promising method, a low-power neuromorphic system, to achieve high accuracy.
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