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Updated: Nov 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Imaging the valley and orbital Hall effect in monolayer MoS2
Fei Xue1,2, Vivek Amin1,2, Paul M Haney1
1Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
None:
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS2 can be used to measure its energy-dependent valley and orbital Hall conductivity.
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