Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

403
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
403
Thermal Sigmatropic Reactions: Overview01:16

Thermal Sigmatropic Reactions: Overview

2.2K
Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred...
2.2K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.2K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.2K
Cycloaddition Reactions: MO Requirements for Thermal Activation01:16

Cycloaddition Reactions: MO Requirements for Thermal Activation

3.8K
Thermal cycloadditions are reactions where the source of activation energy needed to initiate the reaction is provided in the form of heat. A typical example of a thermally-allowed cycloaddition is the Diels–Alder reaction, which is a [4 + 2] cycloaddition. In contrast, a [2 + 2] cycloaddition is thermally forbidden.
3.8K
Thermal Electrocyclic Reactions: Stereochemistry01:17

Thermal Electrocyclic Reactions: Stereochemistry

2.2K
The stereochemistry of electrocyclic reactions is strongly influenced by the orbital symmetry of the polyene HOMO. Under thermal conditions, the reaction proceeds via the ground-state HOMO.
Selection Rules: Thermal Activation
Conjugated systems containing an even number of π-electron pairs undergo a conrotatory ring closure. For example, thermal electrocyclization of (2E,4E)-2,4-hexadiene, a conjugated diene containing two π-electron pairs, gives trans-3,4-dimethylcyclobutene.
2.2K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

603
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
603

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[Survey on the occupational musculoskeletal disorder and its risk factors among male steelworkers].

Zhonghua yu fang yi xue za zhi [Chinese journal of preventive medicine]·2013
Same author

Characterisation and identification of dihydroindole-type alkaloids from processed semen strychni by high-performance liquid chromatography coupled with electrospray ionisation ion trap time-of-flight mass spectrometry.

Phytochemical analysis : PCA·2013
Same author

Identification and effect decomposition of risk factors for Brucella contamination of raw whole milk in china.

PloS one·2013
Same author

Different toxicity of the novel Bacillus thuringiensis (Bacillales: Bacillaceae) strain LLP29 against Aedes albopictus and Culex quinquefasciatus (Diptera: Culicidae).

Journal of economic entomology·2013
Same author

Study on the growth and the photosynthetic characteristics of low energy C(+) ion implantation on peanut.

PloS one·2013
Same author

Proteomic analysis reveals that proteasome subunit beta 6 is involved in hypoxia-induced pulmonary vascular remodeling in rats.

PloS one·2013

Related Experiment Video

Updated: Nov 2, 2025

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
09:09

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation

Published on: February 5, 2020

7.4K

Ballistic thermal rectification in asymmetric homojunctions.

Yuanchen Wu1, Yu Yang1, Longkai Lu1

  • 1NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China.

Physical Review. E
|June 17, 2021
PubMed
Summary

Ballistic thermal rectification in nanoscale devices is improved by increasing structural asymmetry and interface gradualness. Optimizing temperature gradients also enhances thermal rectification in asymmetric homojunctions.

More Related Videos

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.9K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.9K

Related Experiment Videos

Last Updated: Nov 2, 2025

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation
09:09

Asymmetric Thermoelectrochemical Cell for Harvesting Low-grade Heat under Isothermal Operation

Published on: February 5, 2020

7.4K
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.9K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.9K

Area of Science:

  • Nanoscale thermal transport
  • Phonon transport phenomena
  • Solid-state device physics

Background:

  • Ballistic thermal transport is crucial for nanoscale devices where device dimensions approach the phonon mean free path.
  • Thermal rectification, the non-reciprocal heat flow, is essential for managing heat in miniaturized thermal management systems.
  • Asymmetric homojunctions offer a platform for investigating and controlling thermal transport properties.

Purpose of the Study:

  • To investigate ballistic thermal transport in asymmetric homojunctions using the single-particle Lorentz gas model.
  • To explore the impact of structural asymmetry and interface characteristics on thermal rectification.
  • To determine the influence of temperature gradients and average temperatures on thermal rectification efficiency.

Main Methods:

  • Utilized the single-particle Lorentz gas model to simulate ballistic thermal transport.
  • Analyzed asymmetric rectangular homojunctions with varying structural asymmetry.
  • Introduced a hyperbolic tangent profile to model interface steepness and its effect on thermal transport.

Main Results:

  • Ballistic thermal rectification in asymmetric rectangular homojunctions increases with greater structural asymmetry.
  • A decreasing interface steepness (more gradual interface) significantly enhances the thermal rectification ratio.
  • Thermal rectification is improved by increasing the temperature gradient across the homojunction or decreasing the average temperature.

Conclusions:

  • Structural asymmetry and gradual interfaces are key design parameters for enhancing ballistic thermal rectification in homojunctions.
  • Interface steepness plays a critical role, with gradual interfaces being more beneficial for thermal rectification.
  • Temperature conditions, specifically gradient and average temperature, can be manipulated to optimize thermal rectification performance in nanoscale devices.