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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Geometric squeezing into the lowest Landau level

Richard J Fletcher1, Airlia Shaffer2, Cedric C Wilson2

  • 1MIT-Harvard Center for Ultracold Atoms, Research Laboratory of Electronics, and Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. rfletch@mit.edu.

Science (New York, N.Y.)
|June 18, 2021
PubMed

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