Efficient optical proximity correction based on virtual edge and mask pixelation with two-phase sampling.

Area of Science:

• Semiconductor Manufacturing
• Photolithography
• Computational Imaging

Background:

• Optical proximity correction (OPC) is crucial for enhancing image fidelity in optical lithography.
• Efficient OPC is vital for complex layouts in advanced technology nodes.
• Existing methods face challenges in full-chip modification efficiency.

Purpose of the Study:

• To propose an efficient OPC method utilizing virtual edges and two-phase sampling.
• To address imaging anomalies like inward shrinkage and outward extension.
• To improve overall modification efficiency and contour fidelity.

Main Methods:

• Classifying imaging distortions into inward shrinkage and outward extension anomalies.
• Detecting anomalies using templates around mask feature corners and boundaries.
• Generating and shifting virtual edges to correct local anomalies.
• Employing mask pixelation with two-phase sampling for separated evaluation and modification.

Main Results:

• Demonstrated superior modification efficiency compared to existing methods.
• Successfully corrected local imaging anomalies through virtual edge adjustments.
• Achieved accelerated imaging evaluations and guaranteed modification resolution.
• Maintained global control of contour fidelity.

Conclusions:

• The proposed virtual edge and two-phase sampling OPC method offers significant efficiency gains.
• This technique effectively manages imaging anomalies for improved lithography outcomes.
• The approach is well-suited for complex circuit layouts in advanced semiconductor processes.