Related Experiment Video
Updated: Nov 1, 2025

Angle-resolved Photoemission Spectroscopy At Ultra-low Temperatures
Published on: October 9, 2012
Gap-Opening Transition in Dirac Semimetal ZrTe_{5}
Yefan Tian1, Nader Ghassemi1, Joseph H Ross1
1Department of Physics and Astronomy, Texas A&M University, College Station, Texas 77843, USA.
We used nuclear magnetic resonance (NMR) to study the Dirac semimetal ZrTe5. Findings indicate a gap-opening transition and spin-polarized carriers, but no charge density wave.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- ZrTe5 is a material exhibiting Dirac semimetal properties.
- Understanding quantum phenomena in ZrTe5 is crucial for exploring novel electronic states.
Purpose of the Study:
- To investigate the electronic properties of the Dirac semimetal ZrTe5 using nuclear magnetic resonance (NMR) spectroscopy.
- To probe for evidence of excitonic pairing and charge density waves.
Main Methods:
- ^{125}Te nuclear magnetic resonance (NMR) spectroscopy was employed.
- Experiments were conducted with the NMR magnetic field applied parallel to the b axis.
Main Results:
- A significant drop in spin-lattice relaxation rate at 150 K suggests a gap-opening transition in Dirac carriers, indicative of excitonic pairing.
- A negative shift observed below 50 K points to repopulation of Dirac levels with spin-polarized carriers, consistent with the 3D quantum Hall regime.
- No evidence for a charge density wave was detected, contrary to previous proposals.
Conclusions:
- The study reveals a gap-opening transition and spin polarization in ZrTe5, supporting excitonic pairing.
- The findings challenge existing models by ruling out a charge density wave in the observed 3D quantum Hall regime.
More Related Videos
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
12:18Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
Published on: June 27, 2022
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Properties of Transition Metals
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...