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Efficient Thermally Evaporated Perovskite Light-Emitting Devices via a Bilateral Interface Engineering Strategy
Li Song1, Lixin Huang1, Yuan Liu1
1Tianjin Key Laboratory of Electronic Materials and Devices, Hebei Key Laboratory of Advanced Laser Technology and Equipment, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P.R. China.
The Journal of Physical Chemistry Letters
|June 29, 2021
Summary
We developed a defect passivation strategy to improve the performance of all-inorganic perovskite light-emitting devices (PeLEDs) made using thermal evaporation. This method enhances optoelectrical properties, paving the way for more efficient PeLEDs.
Area of Science:
- Materials Science
- Optoelectronics
- Device Engineering
Background:
- All-inorganic perovskite light-emitting devices (PeLEDs) are promising for optoelectronic applications.
- Thermal evaporation is a key fabrication method for PeLEDs, but performance is limited by nonradiative defects.
- Defects at the bulk and interface of the emissive layer significantly hinder device efficiency and stability.
Purpose of the Study:
- To develop a bilateral interfacial defect-passivation strategy for thermally evaporated CsPbBr3 PeLEDs.
- To enhance the optoelectrical performance and stability of PeLEDs by suppressing nonradiative defects.
- To enable high-performance PeLEDs through a novel defect management approach.
Main Methods:
- Implementing 3-amino-1-propanol (3AP)-modified PEDOT:PSS to passivate bulk defects.
- Introducing ammonium salts to passivate the emissive layer/charge transport layer interface defects.
- Utilizing 3AP-induced Cs4PbBr6 and ammonium salts to balance charge injection.
Main Results:
- Significant suppression of nonradiative defects in the CsPbBr3 emissive layer and at interfaces.
- Achieved a luminance of 15745 cd/m2.
- Reached a current efficiency of 32 cd/A and an external quantum efficiency of 8.86%.
- Demonstrated a device lifetime of 3.74 hours.
Conclusions:
- The bilateral interfacial defect-passivation strategy effectively enhances the performance of thermally evaporated CsPbBr3 PeLEDs.
- The combined use of 3AP-modified PEDOT:PSS and ammonium salts addresses bulk and interfacial defects, improving charge injection.
- This approach offers a pathway for developing highly efficient and stable thermally evaporated PeLEDs.
