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Transport properties of ZnV2O4and its correlation to the doping at the cationic sites
Mrittika Singha1, Rajeev Gupta1,2
1Materials Science Programme, IIT Kanpur 208016, India.
Abstract:
We investigate the effect of Fe and Cr doping at Zn and V sites, respectively, on the electrical transport behavior of polycrystalline spinel ZnV2O4. The resistivity studies as a function of temperature reveal the presence of two different transport mechanisms: Arrhenius conduction (170-300 K) and Mott variable range hopping conduction (VRH) (80-170 K). The results also show that Fe doping at Zn sites has a pronounced effect on the electrical transport property together with the V-V distance, accompanied by a decreasing magnetic transition temperature,T. Cr doping, on the other hand, shows a contrasting Arrhenius transport behavior with decreasing V-V distance as well as a decreasingT. In the VRH transport regime, a systematic variation of the values of the Mott parameters due to the change in the localization length along the V-V chains is observed. Further, x-ray Photoelectron spectroscopy studies supporting the stabilization of the doped cation phases are presented in this paper.
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