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Updated: Oct 31, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer
Yuliang Mao1, Zheng Guo1, Jianmei Yuan2
1Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China.
Abstract:
Based on first-principles calculations, we propose van der Waals (vdW) heterojunctions composed of one-dimensional carbon nanotubes (CNTs) and two-dimensional GeSe. Our calculations show that (n,0)CNT/GeSe (n = 5-11) heterojunctions are stable through weak vdW interactions. Among these heterojunctions, (n,0)CNT/GeSe (n = 5-7) exhibit metallic properties, while (n,0)CNT/GeSe (n = 8-11) have a small bandgap, lower than 0.8 eV. The absorption coefficient of (n,0)CNT/GeSe (n = 8-11) in the ultraviolet and infrared regions is around 105 cm-1. Specifically, we found that (11,0)CNT/GeSe exhibits type-II band alignment and has a high photoelectric conversion efficiency of 17.29%, which suggests prospective applications in photoelectronics.
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