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The randomization process involves assigning study participants randomly to experimental or control groups based on their probability of being equally assigned. Randomization is meant to eliminate selection bias and balance known and unknown confounding factors so that the control group is similar to the treatment group as much as possible. A computer program and a random number generator can be used to assign participants to groups in a way that minimizes bias.
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Updated: Oct 31, 2025

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A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories.

Michele Favalli1, Cristian Zambelli1, Alessia Marelli2

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This study introduces a new, scalable randomization method for 3D NAND Flash memory. The technique optimizes data distribution and limits consecutive bits, enhancing memory reliability and reducing errors.

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Area of Science:

  • Solid State Physics
  • Computer Engineering
  • Materials Science

Background:

  • Data randomization is crucial for error reduction in planar NAND Flash memory.
  • 3D memory integration presents new challenges for randomization due to increased array dimensions, particularly along bitlines.

Purpose of the Study:

  • To propose a novel, scalable, and cost-effective randomization scheme for 3D NAND Flash memory.
  • To ensure optimal randomization along both wordline and bitline dimensions.
  • To improve memory reliability by bounding the maximum length of consecutive ones and zeros along bitlines.

Main Methods:

  • Development of a new randomization scheme designed for 3D memory architectures.
  • Implementation of a method to guarantee an upper bound on consecutive bits along bitlines.
  • Validation of the scheme on commercial TLC 3D NAND Flash memory.

Main Results:

  • The proposed scheme achieves optimal randomization across wordline and bitline dimensions.
  • An upper bound on consecutive ones and zeros along bitlines was successfully guaranteed.
  • The method demonstrated effectiveness in reducing Raw Bit Error Rate under various working conditions.

Conclusions:

  • The developed randomization scheme is easy to implement, cost-effective, and scalable for 3D NAND Flash memory.
  • The technique significantly enhances memory reliability by optimizing data distribution and limiting consecutive bits.
  • This approach offers a practical solution for improving error suppression in advanced 3D NAND Flash storage systems.