Related Experiment Video

Updated: Oct 31, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.7K

Overview of the Current State of Gallium Arsenide-Based Solar Cells

Nikola Papež1, Rashid Dallaev1, Ştefan Ţălu2

  • 1Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technická 2848/8, 61600 Brno, Czech Republic.

Materials (Basel, Switzerland)
|July 2, 2021
PubMed

Keywords:
applicationconcentratorsdegradationgallium arsenidesolar cellsspacestructureuav

More Related Videos

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries09:51

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

Published on: April 22, 2013

13.0K
In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells09:19

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Published on: October 3, 2018

8.6K

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
784
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
905
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.0K