Preparation and Characterization of Thin-Film Solar Cells with Ag/C₆₀/MAPbI₃/CZTSe/Mo/FTO Multilayered Structures

New solar cells with Ag/C₆₀/MAPbI₃/Cu₂ZnSnSe₄ (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron-transport layer, active photovoltaic layer, and hole-transport layer were made of C₆₀, CH₃NH₃PbI₃ (MAPbI₃) perovskite, and CZTSe, respectively. The CZTSe hole-transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI₃ films were prepared using a two-step spin-coating method on the CZTSe hole-transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI₃ perovskite films could be substantially improved. Finally, n-type C₆₀ was vacuum-evaporated to be the electronic transport layer. The 50 nm C₆₀ thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density-voltage characteristics were evaluated and compared with the thin-film microstructures. The photo-electronic power-conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin-film solar cell characteristics of open-circuit voltage, short-circuit current density, fill factor, series-resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm², 67.39%, 18.5 Ω and 1.42 mW, respectively.