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Surface Stoichiometry and Depth Profile of Ti-CuN Thin Films Deposited by Magnetron Sputtering
Arun Kumar Mukhopadhyay1,2, Avishek Roy1,3, Gourab Bhattacharjee4
1Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, India.
Abstract:
We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

