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Updated: Oct 30, 2025
Characterization of Thermal Transport in One-dimensional Solid Materials
Published on: January 26, 2014
Thermal Conductivity of Nano-Crystallized Indium-Gallium-Zinc Oxide Thin Films Determined by Differential Three-Omega
Rauf Khan1,2, Michitaka Ohtaki1,2, Satoshi Hata1,3
1Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan.
Abstract:
The temperature dependence thermal conductivity of the indium-gallium-zinc oxide (IGZO) thin films was investigated with the differential three-omega method for the clear demonstration of nanocrystallinity. The thin films were deposited on an alumina (α-Al2O3) substrate by direct current (DC) magnetron sputtering at different oxygen partial pressures ([PO2] = 0%, 10%, and 65%). Their thermal conductivities at room temperature were measured to be 1.65, 1.76, and 2.58 Wm-1K-1, respectively. The thermal conductivities decreased with an increase in the ambient measurement temperature. This thermal property is similar to that of crystalline materials. Electron microscopy observations revealed the presence of nanocrystals embedded in the amorphous matrix of the IGZO films. The typical size of the nanocrystals was approximately 2-5 nm with the lattice distance of about 0.24-0.26 nm. These experimental results indicate that the nanocrystalline microstructure controls the heat conduction in the IGZO films.
