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Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Zhenzhong Zhang1, Fang Wang1, Kai Hu1

  • 1Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.

Materials (Basel, Switzerland)
|July 2, 2021
PubMed

Keywords:
HfOx-based RRAMRS performances improvementsulfur-dopingswitching mechanism

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