Related Experiment Video
Updated: Oct 30, 2025
10:00
Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
13.0K
Random Telegraph Noise in 3D NAND Flash Memories
Alessandro S Spinelli1, Gerardo Malavena1, Andrea L Lacaita1
1Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, Italy.
Micromachines
|July 2, 2021
Summary
This paper reviews random telegraph noise (RTN) in 3D NAND Flash memory. It explains how polycrystalline silicon channels and grain boundaries in 3D architectures impact RTN behavior and current transport.
Area of Science:
- Solid State Physics
- Semiconductor Device Physics
- Materials Science
Background:
- 3D NAND Flash arrays are mainstream memory technologies.
- Current transport in these arrays is influenced by the polycrystalline nature of silicon channels.
- Random Telegraph Noise (RTN) is a significant phenomenon affecting device performance.
Purpose of the Study:
- To review the phenomenology of RTN in 3D NAND Flash arrays.
- To discuss the impact of 3D architectures on RTN characteristics compared to planar devices.
- To explain the underlying physical mechanisms causing RTN in 3D NAND.
Main Methods:
- Review of experimental data on RTN in 3D NAND Flash arrays.
- Application of theoretical and simulation models to explain RTN phenomena.
- Analysis of the influence of polycrystalline silicon channels and grain boundaries on current transport.
Main Results:
- RTN behavior in 3D NAND arrays is significantly influenced by polycrystalline silicon channels.
- The transition from planar to 3D architectures leads to changes in RTN dependence on operating conditions.
- Highly-defective grain boundaries play a crucial role in percolative current transport and localized RTN.
Conclusions:
- The unique features of 3D NAND architectures, particularly grain boundaries, alter RTN characteristics.
- Understanding these changes is vital for optimizing 3D NAND Flash memory reliability and performance.
- RTN in 3D NAND is a complex interplay between material properties and device architecture.
Related Concept Videos
01:04Random Error
4.9K
Random or indeterminate errors originate from various uncontrollable variables, such as variations in environmental conditions, instrument imperfections, or the inherent variability of the phenomena being measured. Usually, these errors cannot be predicted, estimated, or characterized because their direction and magnitude often vary in magnitude and direction even during consecutive measurements. As a result, they are difficult to eliminate. However, the aggregate effect of these errors can be...
4.9K
00:51Non-ohmic Devices
1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
01:14NMR Spectrometers: Resolution and Error Correction
830
When magnetic nuclei in a sample achieve resonance and undergo relaxation, the signal detected in NMR is an approximately exponential free induction decay. Fourier transform of an exponential decay yields a Lorentzian peak in the frequency domain. Lorentzian peaks in an NMR spectrum are defined by their amplitude, full width at half maximum, and position, where the peak width is governed by the spin-spin relaxation time alone. In real experiments, however, the applied magnetic field is rendered...
830
01:22Biasing of FET
416
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
416
01:16Flashbulb Memory
182
A flashbulb memory is a highly vivid and detailed memory, often linked to events of significant emotional impact. These memories stand out in contrast to everyday memories due to their clarity and the precision with which they are recalled. The strong emotions associated with the event act as a catalyst, ensuring that specific details, such as one's location, actions, and even peripheral elements, are etched into memory with remarkable accuracy. For example, many people can vividly recall...
182
01:25MOS Capacitor
1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K