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Updated: Oct 30, 2025

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Published on: February 11, 2016
Selective Route to Stable Silicon-Boron Radicals and Their Corresponding Cations
Mohd Nazish1, Christina M Legendre1, Samir Kumar Sarkar1
1Institut für Anorganische Chemie, Universität Göttingen, Tammannstrasse 4, Göttingen 37077, Germany.
Abstract:
Herein, we report on a facile and selective one-pot synthetic route to silicon-boron radicals. Reduction of Br2BTip (Tip = 2,4,6-PrC6H2) with KC8 in the presence of LSi-R affords LSi(Bu)-B(Br)Tip (1) and LSi(N(TMS)2)-B(Br)Tip (2) [L = PhC(NBu)2]. These first examples of silicon-boron isolated radical species feature spin density on the silicon and boron atoms. 1 and 2 exhibit extraordinary stability to high temperatures under inert conditions in solution and air stability in the solid state. Both radicals have been isolated and fully characterized by electron paramagnetic resonance spectroscopy, SQUID magnetometry, mass spectrometry, cyclic voltammetry, single-crystal X-ray structure analysis, and density functional theory calculations. Moreover, compound 1 exhibits one-electron transfer when treated with 1 equiv of AgSO3CF3 and [Ph3C]+[B(C6F5)4]-, respectively, resulting in the corresponding cations [LSi(Bu)-B(Br)Tip]+[CF3SO3]- (3) and [LSi(Bu)-B(Br)Tip]+[B(C6F5)4]- (4). Compounds 3 and 4 have been characterized with multinuclear NMR and mass spectrometry.
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