Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

The calculated defect corrections to the polarization and dielectric functions for Bloch electrons in quantum wells are presented. These results were employed to derive the first two moment equations from the Boltzmann transport theory and then applied to explore the role played by defects on the magneto-transport of Bloch electrons. Additionally, we have derived analytically the inverse momentum-relaxation time and mobility tensor for Bloch electrons by making use of the screened defect-corrected polarization function. Based on quantum-statistical theory, we have investigated the defect capture and charging dynamics by employing a parameterized physics-based model for defects to obtain defect wave functions. Both capture and relaxation rates, as well as the density for captured Bloch electrons, were calculated self-consistently as functions of temperature, doping density and chosen defect parameters. By applying the energy-balance equation, the number of occupied energy levels and the chemical potential of defects were determined, with which the transition rate for defect capturing was obtained. By applying these results, the defect energy-relaxation, capture and escape rates, and Bloch-electron chemical potential were calculated self-consistently for a non-canonical subsystem of Bloch electrons. At the same time, the energy- and momentum-relaxation rates of Bloch electrons, as well as the current suppression factor, were also investigated quantitatively. By combining all these results, the temperature dependence of the Hall and longitudinal mobilities was presented for Bloch electrons in either single- or multi-quantum wells.