Related Experiment Video
Updated: Oct 29, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Rational Design and Growth of MOF-on-MOF Heterostructures
Lulu Chai1,2, Junqing Pan2, Yue Hu1
1Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325000, China.
Abstract:
Multiporous metal-organic frameworks (MOFs) have emerged as a subclass of highly crystalline inorganic-organic materials, which are endowed with high surface areas, tunable pores, and fascinating nanostructures. Heterostructured MOF-on-MOF composites are recently becoming a research hotspot in the field of chemistry and materials science, which focus on the assembly of two or more different homogeneous or heterogeneous MOFs with various structures and morphologies. Compared with one single MOF, the dual MOF-on-MOF composites exhibit unprecedented tunability, hierarchical nanostructure, synergistic effect, and enhanced performance. Due to the difference of inorganic metals and organic ligands, the lattice parameters in a, b, and c directions in the single crystal cells could bring about subtle or large structural difference. It will result in the composite material with distinct growth methods to obtain secondary MOF grown from the initial MOF. In this review, the authors wish to mainly outline the latest synthetic strategies of heterostructured MOF-on-MOFs and their derivatives, including ordered epitaxial growth, random epitaxial growth, etc., which show the tutorial guidelines for the further development of various MOF-on-MOFs.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

