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Preparation and Characterization of C60/Graphene Hybrid Nanostructures
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A chemisorbed interfacial layer for seeding atomic layer deposition on graphite.

Anton Brown1, John Greenwood, César J Lockhart de la Rosa

  • 1Division of Molecular Imaging and Photonics, Department of Chemistry, KU Leuven-University of Leuven, Celestijnenlaan, 200 F, 3001 Leuven, Belgium. joan.teyssandier@gmail.com steven.defeyter@kuleuven.be.

Nanoscale
|July 13, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed a method to covalently modify graphene surfaces, enabling high-quality dielectric layer growth. This sacrificial seeding approach preserves graphene properties while enhancing device integration.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Integrating 2D materials like graphene into devices requires functionalizing their inert surfaces for thin film deposition.
  • Existing methods for surface modification face challenges in balancing surface reactivity with the preservation of intrinsic graphene properties.

Purpose of the Study:

  • To develop a robust method for covalently modifying graphitic surfaces to introduce reactive sites for high-quality dielectric layer growth.
  • To investigate the use of aryl diazonium species as a sacrificial seeding layer for atomic layer deposition (ALD) on graphene.

Main Methods:

  • Covalent grafting of aryl diazonium species with tri-methoxy groups onto highly oriented pyrolytic graphite (HOPG) and graphene.
  • Atomic layer deposition (ALD) of aluminum oxide (Al2O3), a high-κ dielectric material, using the grafted species as seeding sites.
  • Characterization using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, and electrical measurements.

Main Results:

  • Successful deposition of smooth and uniform Al2O3 dielectric films on modified graphene surfaces.
  • Demonstration that grafted aryl groups detach during ALD at 150 °C, restoring the graphene's sp2-hybridized state without damaging the dielectric layer.
  • Evidence that annealing can heal graphitic defects prior to grafting, with aryl groups acting as a sacrificial seeding layer.

Conclusions:

  • Aryl diazonium grafting provides a viable strategy for defect healing and surface functionalization of graphene.
  • The sacrificial seeding approach enables high-quality dielectric film growth while preserving the unique properties of graphene.
  • This method facilitates the integration of graphene into advanced electronic devices requiring high-κ dielectric layers.