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Ultra-thin Si-padded Si3N4 waveguides for low-loss photonics
Optics Letters
|July 15, 2021
Summary
We developed a novel silicon nitride waveguide with a silicon pad, achieving ultra-low propagation loss of 0.055 dB/cm. This design offers potential for efficient, high-speed photonic integrated circuits.
Area of Science:
- Photonics
- Materials Science
- Integrated Optics
Background:
- Silicon nitride (Si3N4) waveguides are crucial for integrated photonics.
- Minimizing propagation and bending losses in Si3N4 waveguides is essential for device performance.
Purpose of the Study:
- To propose and characterize an ultra-thin Si-padded Si3N4 waveguide.
- To evaluate the optical loss performance of the proposed waveguide structure.
Main Methods:
- Fabrication of a hybrid waveguide comprising a Si3N4 strip on a Si slab, separated by SiO2.
- Measurement of waveguide propagation loss and bending loss.
Main Results:
- Achieved a low propagation loss of 0.055 dB/cm.
- Measured a bending loss of 0.09 dB per 90° bend, dependent on the bending radius.
- Demonstrated hybrid waveguide mode confinement in both Si and Si3N4.
Conclusions:
- The Si-padded Si3N4 waveguide structure exhibits excellent low-loss characteristics.
- This design holds significant promise for developing low-loss, high-speed photonic integrated circuits.
