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Optical modulator based on a silicon-ITO grating embedded rib structure with a tunable group delay.

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    Optics Letters
    |July 15, 2021
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    Summary

    This study introduces a novel silicon-indium tin oxide (Si-ITO) optical modulator. It achieves significant improvements in modulation efficiency and tunable group delay for optical communication applications.

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    Area of Science:

    • Photonics and optical engineering
    • Materials science
    • Electrical engineering

    Background:

    • Conventional optical modulators face limitations in efficiency and tunable delay.
    • Indium tin oxide (ITO) offers electrically tunable optical properties.
    • Silicon photonics provides a robust platform for integrated optical devices.

    Purpose of the Study:

    • To propose and demonstrate an engineered silicon-indium tin oxide (Si-ITO) structure for optical modulation.
    • To achieve a large and electrically tunable group delay.
    • To improve modulation efficiency and extinction ratio compared to conventional devices.

    Main Methods:

    • Fabrication of a Si-ITO grating embedded rib waveguide structure.
    • Utilizing the electrically tunable permittivity of ITO for optical modulation.
    • Characterization of device performance including extinction ratio, modulation efficiency, and group delay tuning.

    Main Results:

    • Demonstrated optical modulation with an extinction ratio over 8 dB for a 10 µm device.
    • Achieved a modulation efficiency of approximately 12 V-µm across a wide wavelength range (1530-1570 nm).
    • Reported approximately 82 psec electrical tuning in group delay.

    Conclusions:

    • The engineered Si-ITO structure enables efficient optical modulation and significant group delay tuning.
    • The device offers improved performance metrics compared to traditional rib waveguide modulators.
    • This technology holds promise for developing compact, low-dissipation tunable delay lines and slow light modulators.