Approaches to tuning the exceptional point of PT-symmetric double ridge stripe lasers

Electrically injected Parity-time (PT)-symmetric double ridge stripe semiconductor lasers lasing at 980 nm range are designed and measured. The spontaneous PT-symmetric breaking point or exceptional point (EP) of the laser is tuned below or above the lasing threshold by means of varying the coupling constant or the mirror loss. The linewidth of the optical spectrum of the PT-symmetric laser is narrowed, compared with that of traditional single ridge (SR) laser and double ridge (DR) laser. Furthermore, the far field pattern of the PT-symmetric laser with EP below the lasing threshold is compared with that of the PT-symmetric laser with EP above the lasing threshold experimentally. It is found that when the laser start to lase, the former is single-lobed while the latter is double-lobed. when the current continues to increase, the former develops into double lobe directly while the latter first develops into single lobe and then double lobe again.