Silicon Microchannel-Driven Raman Scattering Enhancement to Improve Gold Nanorod Functions as a SERS Substrate toward...

The investigation of enhanced Raman signal effects and the preparation of high-quality, reliable surface-enhanced Raman scattering (SERS) substrates is still a hot topic in the SERS field. Herein, we report an effect based on the shape-induced enhanced Raman scattering (SIERS) to improve the action of gold nanorods (AuNRs) as a SERS substrate. Scattered electric field simulations reveal that bare V-shaped Si substrates exhibit spatially distributed interference patterns from the incident radiation used in the Raman experiment, resulting in constructive interference for an enhanced Raman signal. Experimental data show a 4.29 increase in Raman signal intensity for bare V-shaped Si microchannels when compared with flat Si substrates. The combination of V-shaped microchannels and uniform aggregates of AuNRs is the key feature to achieve detections in ultra-low concentrations, enabling reproducible SERS substrates having high performance and sensitivity. Besides SIERS effects, the geometric design of V-shaped microchannels also enables a "trap" to the molecule confinement and builds up an excellent electromagnetic field distribution by AuNR aggregates. The statistical projection of SERS spectra combined with the SIERS effect displayed a silhouette coefficient of 0.83, indicating attomolar (10^-18 mol L^-1) detection with the V-shaped Si microchannel.