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Updated: Oct 27, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Yameng Cao1, Sebastian Wood2, Filipe Richheimer2
1National Physical Laboratory, Hampton Road, Teddington, TW11, 0LW, UK. yameng.cao@npl.co.uk.
We reduced spatial inhomogeneity in monolayer tungsten disulfide (WS₂) by five-fold using laser illumination. This process enhances photoluminescence, improving WS₂ quality for optoelectronic devices.
10:41Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
Published on: December 20, 2016
10:36Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
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