Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dynamic Charge Redistribution as the Key Mechanism for NO<sub>2</sub> Detection in MoS<sub>2</sub> Revealed by <i>In Operando</i> Scanning Photoelectron Microscopy.

ACS applied materials & interfaces·2026
Same author

Quantum Light Emission from GaAs<sub><i>x</i></sub>P<sub>1-<i>x</i></sub> Quantum Dots in Wurtzite GaP Nanowires.

ACS applied materials & interfaces·2026
Same author

Growth and transport properties of InAsSb nanoflags.

Nanoscale·2026
Same author

Enhanced Photon Extraction through Optimized Waveguide Geometry for Zincblende InAsP/InP Nanowire Quantum Dots Emitting in the Telecom Range.

ACS applied nano materials·2026
Same author

Halide-Exchange Arrest Enables Reabsorption-Free CsPbCl<sub>3</sub>/CsPbI<sub>3</sub> Perovskite Core/Shell Nanocrystals.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

PSA-Responsive Aptamer-Based Switchable Aggregates of Ultrasmall Gold Nanoparticles.

Sensors (Basel, Switzerland)·2026

Related Experiment Video

Updated: Oct 26, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.9K

High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices.

Isha Verma1, Sedighe Salimian1, Valentina Zannier1

  • 1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.

ACS Applied Nano Materials
|July 26, 2021
PubMed
Summary

Researchers developed high-quality, free-standing 2D indium antimonide (InSb) nanoflags on nanowire stems. This breakthrough enables precise electrical characterization and opens doors for advanced quantum devices.

More Related Videos

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

15.2K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.5K

Related Experiment Videos

Last Updated: Oct 26, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.9K
Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

15.2K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Growing high-quality 2D indium antimonide (InSb) layers is challenging due to lattice mismatch with common substrates.
  • Free-standing 2D InSb nanostructures on nanowire (NW) stems offer a solution by utilizing NWs to relax elastic strain.

Purpose of the Study:

  • To optimize the morphology of free-standing 2D InSb nanoflags (NFs).
  • To enhance the lateral size of 2D InSb NFs for improved characterization and device fabrication.

Main Methods:

  • Utilized robust NW stems and optimized growth parameters.
  • Employed reflection high-energy electron diffraction (RHEED) for precise substrate orientation.
  • Conducted transmission electron microscopy (TEM) for structural and compositional analysis.

Main Results:

  • Achieved defect-free zinc blend crystal structure and stoichiometric composition in 2D InSb NFs.
  • Demonstrated relaxed lattice parameters and increased lateral size of the NFs.
  • Measured a record electron mobility of ~29,500 cm^2/(V s) for free-standing 2D InSb nanostructures.

Conclusions:

  • Successfully optimized free-standing 2D InSb NFs with enhanced size and quality.
  • The NFs are suitable for fabricating Hall-bar contacts for precise electrical measurements.
  • These 2D InSb NFs hold promise for the development of advanced quantum devices.