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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Ferroelectric field-effect transistors based on HfO2: a review.
Halid Mulaosmanovic1, Evelyn T Breyer1, Stefan Dünkel2
1NaMLab gGmbH, 01187 Dresden, Germany.
Nanotechnology
|July 28, 2021
Summary
Ferroelectric field-effect transistors (FeFETs) using hafnium oxide are advancing rapidly for nonvolatile memory. This review covers their principles, performance, and emerging applications in computing and RF devices.
Area of Science:
- Solid State Physics
- Materials Science
- Electrical Engineering
Background:
- Ferroelectric field-effect transistors (FeFETs) are emerging nonvolatile memory devices.
- Hafnium oxide (HfO2) has become a leading material for FeFETs.
- A decade of research has significantly advanced FeFET technology.
Purpose of the Study:
- To review the progress of hafnium oxide-based FeFETs.
- To analyze their application in nonvolatile memory.
- To survey alternative applications like neuromorphic computing.
Main Methods:
- Review of recent scientific literature on FeFETs.
- Analysis of device operation principles and switching mechanisms.
- Evaluation of material properties and array structures.
Main Results:
- Detailed discussion of FeFET operation, materials, and array designs.
- Analysis of key performance metrics: endurance, retention, memory window, multi-level operation, and scaling.
- Survey of FeFETs in neuromorphic computing, in-memory computing, and RF devices.
Conclusions:
- Hafnium oxide FeFETs show significant promise for nonvolatile memory.
- Ongoing research is expanding FeFET applications beyond traditional memory roles.
- FeFET technology continues to evolve with advancements in materials and device design.
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