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Evaluating Ovonic Threshold Switching Materials with Topological Constraint Theory.

John C Read1, Derek A Stewart1, James W Reiner1

  • 1Western Digital Corporation, 5601 Great Oaks Pkwy, San Jose, California 95119, United States.

ACS Applied Materials & Interfaces
|August 2, 2021
PubMed
Summary

Topological Constraint Theory explains ovonic threshold switching (OTS) material properties. Mean coordination number reveals transitions in glass networks, enabling optimization of OTS selectors for nonvolatile memory.

Keywords:
OTSchalcogenide glassescross-point memorymean coordination numberovonic threshold switchtopological constraint theory

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid State Chemistry

Background:

  • Ovonic threshold switching (OTS) materials are crucial for nonvolatile memory selectors.
  • Understanding their physical properties is key to improving device performance.

Purpose of the Study:

  • To apply Topological Constraint Theory (TCT) to describe the physical properties of sputtered thin-film OTS materials.
  • To establish a framework for optimizing OTS materials for electronic devices.

Main Methods:

  • Utilized Topological Constraint Theory (TCT) for analysis.
  • Employed mean coordination number (MCN) as a metric for glass network structure.
  • Analyzed data trends from various measurements on sputtered thin films.

Main Results:

  • TCT successfully describes the physical properties of OTS materials and devices.
  • Changes in MCN indicate transitions between floppy and rigid glass networks.
  • Film-level measurements correlate with TCT predictions.

Conclusions:

  • TCT provides a robust framework for understanding OTS material behavior.
  • MCN is a valuable indicator for optimizing OTS selector materials.
  • This approach facilitates the development of advanced nonvolatile memory.