Related Experiment Video
Updated: Oct 24, 2025

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
Published on: May 23, 2025
Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2FET
Heyi Li1, Chaoming Liu1, Yanqing Zhang1
1Harbin Institute of Technology, Harbin, People's Republic of China.
Abstract:
The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2FET.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
08:31Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments
Published on: June 27, 2022
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...