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Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots
Leon C Camenzind1, Simon Svab1, Peter Stano2,3
1Department of Physics, University of Basel, Basel 4056, Switzerland.
Physical Review Letters
|August 16, 2021
Summary
We measured g-factor corrections in gallium arsenide (GaAs) quantum dots, revealing insights into spin-orbit interactions. These findings are crucial for advancing spin qubits in GaAs quantum dots.
Area of Science:
- Condensed Matter Physics
- Quantum Computing
Background:
- Gallium arsenide (GaAs) quantum dots are promising platforms for spin qubits.
- Understanding g-factor corrections is essential for precise qubit control.
Purpose of the Study:
- To experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots.
- To investigate the influence of spin-orbit interactions on the g-factor.
Main Methods:
- Measuring tunnel rates into spin states of an empty quantum dot.
- Applying in-plane magnetic fields of varying strengths and directions.
- Extracting Zeeman splitting and quantifying Zeeman energy.
Main Results:
- A linear dependence of Zeeman energy on magnetic field strength was observed.
- Isotropic and anisotropic g-factor corrections were quantified.
- The results were explained by spin-orbit interaction-induced band-structure effects.
Conclusions:
- Experimental detection of subtle band-structure effects on the g-factor in GaAs quantum dots.
- Significance of these findings for the development of robust spin qubits.
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