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Updated: Oct 24, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots
Leon C Camenzind1, Simon Svab1, Peter Stano2,3
1Department of Physics, University of Basel, Basel 4056, Switzerland.
Abstract:
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g factor. The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. Experimental detection and identification of minute band-structure effects in the g factor is of significance for spin qubits in GaAs quantum dots.
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