Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

709
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
709
Types of Semiconductors01:20

Types of Semiconductors

1.0K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.0K
Semiconductors01:22

Semiconductors

1.0K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.0K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.1K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.1K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

588
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
588
MOSFET01:16

MOSFET

702
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
702

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Diazo-6Bx, a Six-Branched Diazo Cross-Linker, Enables High-Fidelity Patterning for Solution-Processed Electronics with Stable Operation.

ACS nano·2026
Same author

Endogenous and exogenous determinants of sex differences in blood pressure.

NPJ cardiovascular health·2026
Same author

Disorder-mediated non-equilibrium photocurrent redistribution enables homeostatic synaptic conditioning in AgBiS<sub>2</sub> heterostructure.

Nature communications·2026
Same author

From perovskite top interfaces to metal contacts: stability-driven design for tandem-compatible inverted solar cells.

Chemical science·2026
Same author

Ag<sub>2</sub>Se/conjugated polyelectrolyte heterojunction films for high-performance flexible thermoelectrics.

Materials horizons·2026
Same author

Quantum dots with photopolymerisable ligands for green-solvent direct photolithography.

Materials horizons·2026
Same journal

Taphonomic analysis at Liang Bua reveals the behavioral and technological capabilities of <i>Homo floresiensis</i>.

Science advances·2026
Same journal

Targeting granule initiation and amyloplast structure to create giant starch granules in wheat.

Science advances·2026
Same journal

A meta-analysis of carbon losses and gains from tropical moist forest degradation and regeneration.

Science advances·2026
Same journal

Ancient DNA reveals elite dynastic rule among Iron Age Eurasian Steppe nomads.

Science advances·2026
Same journal

Targeting astrocytic Dp71 attenuates BBB disruption after traumatic brain injury through WTAP-associated m<sup>6</sup>A regulation of MMP2.

Science advances·2026
Same journal

Pancreatic α cells are required for nutrient homeostasis by regulating dynamic β cell networks in islets.

Science advances·2026
See all related articles

Related Experiment Video

Updated: Oct 23, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.2K

Completely foldable electronics based on homojunction polymer transistors and logics.

Min Je Kim1, Hwa Sook Ryu2, Yoon Young Choi1

  • 1Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea.

Science Advances
|August 19, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed foldable polymer thin-film transistors (PTFTs) using selective doping and cross-linking. This strategy enhances mechanical stability and electrical performance for advanced foldable electronics.

More Related Videos

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.6K
Morphology Control for Fully Printable Organic&#8211;Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
08:29

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

9.2K

Related Experiment Videos

Last Updated: Oct 23, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.2K
A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.6K
Morphology Control for Fully Printable Organic&#8211;Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
08:29

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

9.2K

Area of Science:

  • Materials Science
  • Organic Electronics
  • Polymer Chemistry

Background:

  • The growing demand for foldable electronics necessitates conducting polymer electrodes with superior mechanical stability.
  • Weak physical adhesion at heterojunctions presents a significant challenge for current foldable electronic devices.

Purpose of the Study:

  • To report the fabrication of completely foldable polymer thin-film transistors (PTFTs) and logic gate arrays.
  • To address the challenge of weak interfacial adhesion in foldable electronics through an innovative fabrication strategy.

Main Methods:

  • Fabrication of homojunction-based PTFTs using diketopyrrolopyrrole-based semiconducting polymer films.
  • Selective doping of polymer films with FeCl3 to create source/drain electrodes with a gradual work function change.
  • Enhancement of interfacial adhesion via cross-linking between adjacent component layers.

Main Results:

  • Achieved low contact resistance due to improved charge injection promoted by the doping process.
  • Demonstrated significantly improved interfacial adhesion in the fabricated PTFTs.
  • Maintained excellent electrical performance of the PTFTs even after extreme folding, with no noticeable degradation.

Conclusions:

  • The proposed fabrication strategy, involving selective doping and interfacial cross-linking, effectively enhances the mechanical stability and electrical performance of PTFTs.
  • This approach is applicable to various semiconducting polymers, paving the way for the realization of robust foldable electronics.
  • The developed PTFTs and logic gate arrays show great promise for next-generation flexible and wearable devices.