Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Equivalent Capacitance01:19

Equivalent Capacitance

1.7K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
1.7K
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.1K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.1K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

536
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
536
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.3K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.3K
Capacitors and Capacitance01:18

Capacitors and Capacitance

8.5K
A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
8.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

Fractional quantum anomalous Hall effect in moiré fractional Chern insulators.

Nature materials·2026
Same author

Enhanced Efficacy of Rhizosphere Microorganisms and Green Compounds: A Dual-Action Strategy Against <i>Bursaphelenchus xylophilus</i> in <i>Pinus massoniana</i>.

Microorganisms·2026
Same author

Thermal Decomposition Mechanism and Product Distribution Control of Retired Wind Turbine Blades Catalyzed by Metals.

ACS omega·2026
Same author

Efficacy of lifestyle interventions in treating erectile dysfunction: a systematic review and meta-analysis of randomized controlled trials.

The journal of sexual medicine·2026
Same author

Imaging the flat bands of magic-angle graphene reshaped by interactions.

Nature·2026

Related Experiment Video

Updated: Oct 23, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

8.7K

Charge-order-enhanced capacitance in semiconductor moiré superlattices.

Tingxin Li1, Jiacheng Zhu1, Yanhao Tang1

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.

Nature Nanotechnology
|August 24, 2021
PubMed
Summary

Researchers studied thermodynamic properties of correlated insulating states in Van der Waals moiré materials using gate capacitance measurements. They observed anomalously large capacitance, revealing insights into electronic correlations and enabling property extraction.

More Related Videos

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.5K

Related Experiment Videos

Last Updated: Oct 23, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

8.7K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.5K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanoscience

Background:

  • Van der Waals moiré materials offer a tunable platform for investigating electronic correlation phenomena.
  • Correlated insulating states have been identified in semiconductor moiré systems at various filling factors.

Purpose of the Study:

  • To explore the thermodynamic properties of correlated insulating states in MoSe2/WS2 moiré superlattices.
  • To utilize gate capacitance measurements as a probe for understanding these electronic states.

Main Methods:

  • Measurement of gate capacitance in MoSe2/WS2 moiré superlattices.
  • Analysis of capacitance variations across different filling factors (0-8).

Main Results:

  • Observation of incompressible states at integer and fractional filling factors.
  • Discovery of anomalously large capacitance (up to 60% above geometrical capacitance) in compressible regions.
  • Identification of device-geometry-dependent Coulomb interactions and charge-ordered state phase mixing as the cause of large capacitance.

Conclusions:

  • Gate capacitance is established as a powerful technique for probing correlated states in semiconductor moiré systems.
  • Thermodynamic properties, including the gap, electronic entropy, and specific heat capacity, were successfully extracted.
  • Control over these correlated states can be achieved through sample-gate coupling.