Resistance Switching and Failure Behavior of the MoO/Mo₂C Heterostructure

With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoO/Mo₂C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoO/Mo₂C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/-0.3 V, an ultralow power consumption of 5 × 10^-8 W, and an on/off ratio of 10², which is ascribed to the transport of the internal oxygen ions of MoO. Furthermore, the failure behavior of RS behaviors of the MoO/Mo₂C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoO layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoO and Mo₂C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.