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Quantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers.

Patrick J Strohbeen1, Sebastian Manzo1, Vivek Saraswat1

  • 1Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, United States.

ACS Applied Materials & Interfaces
|August 25, 2021
PubMed
Summary
This summary is machine-generated.

Directly grown graphene significantly reduces manganese diffusion in spintronic heterostructures. This method is superior to transferred graphene, minimizing defects and enhancing material performance.

Keywords:
defectdiffusionepitaxygraphenephotoemission

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene heterostructures with Ge and GaAs are crucial for spintronics.
  • Synthesizing graphene directly on substrates like GaAs is challenging, often requiring layer transfer and annealing.
  • These post-synthesis steps introduce defects into the graphene layer.

Purpose of the Study:

  • To quantify manganese diffusion mechanisms through graphene in Mn/graphene/Ge and Mn/graphene/GaAs heterostructures.
  • To compare diffusion in samples with directly grown graphene versus transferred graphene.
  • To understand the role of graphene defects in manganese diffusion.

Main Methods:

  • Utilized *in situ* photoemission spectroscopy to measure manganese diffusion.
  • Prepared heterostructures using both direct graphene growth and graphene layer transfer.
  • Analyzed diffusion coefficients and activation energies.

Main Results:

  • Directly grown graphene on Ge (001) reduced Mn diffusion by 1000 times compared to no graphene.
  • Transferred graphene on Ge suppressed Mn diffusion by a factor of 10.
  • Low activation energies (0.1-0.5 eV) and prefactor scaling indicated Mn diffusion primarily occurs at graphene defects.

Conclusions:

  • Graphene acts as an effective diffusion barrier for manganese, particularly when grown directly on the substrate.
  • Graphene defects significantly influence manganese diffusion rates.
  • Developing direct graphene growth techniques on functional substrates is essential for advanced spintronic applications.