2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation.

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Device Physics

Background:

• Graphene field-effect transistors (GFETs) offer unique electronic properties but lack accessible system-level design models.
• Existing GFET models are often complex, hindering their adoption in circuit design.
• Understanding the impact of device architecture (gate position, substrate, graphene growth) is crucial for GFET selection.

Purpose of the Study:

• To provide simplified modeling and simulation tools for GFETs.
• To facilitate the selection of appropriate GFET topologies for system-level design.
• To enable researchers to predict GFET device performance easily.

Main Methods:

• Development of a GFET model implemented in MATLAB, Verilog (Cadence), and VHDL-AMS (Simplorer).
• Analysis of GFET architectures including top-gated, back-gated, and dual-gated configurations.
• Exploration of various substrates (silicon, SiC, quartz/glass) and graphene growth methods (CVD, mechanical exfoliation).

Main Results:

• A user-friendly GFET model is now available in multiple simulation environments.
• The study provides insights into how device architecture influences GFET performance.
• A tutorial guides researchers in implementing the model for performance prediction.

Conclusions:

• The developed GFET model and tutorial simplify the integration of GFETs into system-level designs.
• Accessible modeling tools are essential for accelerating GFET adoption in electronic circuits.
• This work empowers researchers to effectively utilize GFETs in their designs.