MAPbI₃ Microrods-Based Photo Resistor Switches: Fabrication and Electrical Characterization

Area of Science:

• Materials Science
• Solid-State Physics
• Optoelectronics

Background:

• Methylammonium lead iodide (MAPbI₃) is a key perovskite material with optoelectronic properties.
• Photo resistor switches require materials with tunable conductivity under light.
• Previous research has explored perovskites for electronic devices, but applications in photo resistor switches are less common.

Purpose of the Study:

• To investigate the application of methylammonium lead iodide (MAPbI₃) perovskite microrods in photo resistor switches.
• To fabricate and characterize a metal-semiconductor-metal (MSM) device using MAPbI₃ microrods.
• To understand the electrical transport mechanisms in dark and under illumination.

Main Methods:

• Fabrication of silver-MAPbI₃(rods)-silver (Ag/MAPbI₃/Ag) based photo-resistors.
• Preparation of MAPbI₃ microrods via a low-temperature solution process.
• Morphological and compositional analysis using Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive X-ray Spectroscopy (EDS).
• Electrical characterization through current-voltage (I-V) measurements under varying voltage and illumination conditions.

Main Results:

• Successful fabrication of Ag/MAPbI₃/Ag photo-resistor devices using individual MAPbI₃ microrods.
• FESEM and EDS confirmed the morphology and elemental composition of the microrods.
• In the dark, electrical conduction was governed by trap-controlled charge transport mechanisms.
• Under illumination, carrier transport was dominated by photogenerated current mechanisms.

Conclusions:

• MAPbI₃ perovskite microrods are suitable for photo resistor switch applications.
• The study elucidates distinct electrical conduction mechanisms in dark and illuminated conditions.
• This work opens avenues for perovskite applications in photo-induced resistor switches and related optoelectronic devices.