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Updated: Oct 22, 2025
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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
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Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure
Jiawei Wang1, Aitian Chen2, Peisen Li3
1College of Science, Zhejiang University of Technology, Hangzhou 310023, China.
Materials (Basel, Switzerland)
|August 27, 2021
Summary
Electric-field control of magnetism in multiferroic heterostructures offers a path to low-power data storage. The CoFeB/PMN-PT system demonstrates nonvolatile control of magnetic properties for advanced spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Electric-field control of magnetism is crucial for next-generation data storage.
- Multiferroic compounds offer coupled ferroelectric and magnetic orders.
- Room-temperature single-phase multiferroics are scarce, driving research into composite systems.
Purpose of the Study:
- To review theoretical and experimental advancements in electric-field control of magnetism via strain coupling in ferromagnetic (FM)/ferroelectric (FE) heterostructures.
- To highlight the CoFeB/PMN-PT heterostructure as a key example.
- To explore applications in spintronic devices like magnetic tunnel junctions (MTJs).
Main Methods:
- Review of theoretical models and experimental results.
- Focus on strain-mediated coupling in FM/FE heterostructures.
- Investigation of electric-field control in MTJ/FE architectures.
Main Results:
- Demonstration of giant, nonvolatile, and reversible electric-field control of magnetism at room temperature.
- Successful application in prototype spintronic devices, including spin valves and MTJs.
- Nonvolatile electric-field control of tunneling magnetoresistance in MTJ/FE systems without an external magnetic field.
Conclusions:
- The CoFeB/PMN-PT heterostructure is a promising platform for electric-field control of magnetism.
- MTJ/FE architectures show potential for future data storage technologies.
- Challenges and future perspectives in straintronics and spintronics are identified.
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