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Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Paramagnetism01:30

Paramagnetism

2.7K
Paramagnets are materials with unpaired electrons that possess a finite magnetic moment. In the absence of a magnetic field, these moments are randomly oriented, and thus the net moment is zero. Under an external field, a torque acting on the moments tends to align them along the field's direction. However, the random thermal motion of electrons produces a torque opposite to the external field and tries to disorient the moments. These two competing effects align only a few moments along the...
2.7K
Magnetic Susceptibility and Permeability01:31

Magnetic Susceptibility and Permeability

1.6K
In linear magnetic materials, like paramagnets and diamagnets, magnetization is proportional to the magnetic field intensity. The constant of proportionality, a dimensionless number, is called magnetic susceptibility. The value of the susceptibility depends on the type of material.
When diamagnetic materials are placed under an external magnetic field, the moments opposite to the field are induced. Hence, the susceptibility for diamagnets has a minimal negative value of 10-5–10-6. Since...
1.6K
Diamagnetism01:26

Diamagnetism

2.5K
Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
2.5K
MOS Capacitor01:25

MOS Capacitor

1.1K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.1K
Potential Due to a Magnetized Object01:24

Potential Due to a Magnetized Object

400
Magnetic dipoles in magnetic materials are aligned when placed under an external magnetic field. For paramagnets and ferromagnets, dipole alignment occurs in the direction of the magnetic field. However, the dipoles align opposite to the field in the case of diamagnets. This state of magnetic polarization due to the external field is called magnetization. Magnetization is defined as the dipole moment per unit volume. It plays a similar role to polarization in electrostatics.
The vector...
400

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Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure.

Jiawei Wang1, Aitian Chen2, Peisen Li3

  • 1College of Science, Zhejiang University of Technology, Hangzhou 310023, China.

Materials (Basel, Switzerland)
|August 27, 2021
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Summary

Electric-field control of magnetism in multiferroic heterostructures offers a path to low-power data storage. The CoFeB/PMN-PT system demonstrates nonvolatile control of magnetic properties for advanced spintronic devices.

Keywords:
FM/FE multiferroic heterostructureMTJmagnetoelectric memorystraintronicsvolatile and nonvolatile

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Electric-field control of magnetism is crucial for next-generation data storage.
  • Multiferroic compounds offer coupled ferroelectric and magnetic orders.
  • Room-temperature single-phase multiferroics are scarce, driving research into composite systems.

Purpose of the Study:

  • To review theoretical and experimental advancements in electric-field control of magnetism via strain coupling in ferromagnetic (FM)/ferroelectric (FE) heterostructures.
  • To highlight the CoFeB/PMN-PT heterostructure as a key example.
  • To explore applications in spintronic devices like magnetic tunnel junctions (MTJs).

Main Methods:

  • Review of theoretical models and experimental results.
  • Focus on strain-mediated coupling in FM/FE heterostructures.
  • Investigation of electric-field control in MTJ/FE architectures.

Main Results:

  • Demonstration of giant, nonvolatile, and reversible electric-field control of magnetism at room temperature.
  • Successful application in prototype spintronic devices, including spin valves and MTJs.
  • Nonvolatile electric-field control of tunneling magnetoresistance in MTJ/FE systems without an external magnetic field.

Conclusions:

  • The CoFeB/PMN-PT heterostructure is a promising platform for electric-field control of magnetism.
  • MTJ/FE architectures show potential for future data storage technologies.
  • Challenges and future perspectives in straintronics and spintronics are identified.