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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Carbon-Free Solution-Based Doping for Silicon.

Sebastiano Caccamo¹, Rosaria Anna Puglisi¹

¹Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, 95121 Catania, Italy.

Nanomaterials (Basel, Switzerland)

|August 27, 2021

Summary

This summary is machine-generated.

Molecular doping using carbon-free phosphoric acid significantly enhances semiconductor doping efficiency. This novel method avoids carbon-related charge carrier traps, enabling higher carrier doses and improved industrial applications.

Keywords:

carbon-free electrical properties metallurgical junction molecular doping semiconductor doping semiconductors

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Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Molecular doping (MD) utilizes liquid solutions for semiconductor dopant precursors.
Traditional organic molecule precursors introduce carbon, creating charge carrier traps and reducing doping efficiency.
A carbon-free doping method is crucial for industrial semiconductor applications.

Purpose of the Study:

To introduce a novel molecular doping method using a carbon-free precursor.
To investigate the impact of a carbon-free precursor on doping efficiency and carrier density.
To assess the repeatability and industrial viability of the new doping technique.

Main Methods:

Employed phosphoric acid as a carbon-free dopant precursor.
Utilized the self-ordered monolayer deposition of the precursor on semiconductor surfaces.
Characterized the resulting carrier doses and surface density.

Main Results:

Achieved high electrical carrier doses up to 3 × 10¹⁵ #/cm², with localized peaks of 1 × 10²⁰ #/cm³.
Demonstrated high repeatability and yield compared to traditional MD methods.
Phosphoric acid's smaller steric footprint enabled higher surface density of dopants.

Conclusions:

Molecular doping with carbon-free phosphoric acid overcomes limitations of organic precursors.
The method significantly enhances doping efficiency by eliminating carbon-induced traps.
This approach offers a promising route for scalable and efficient industrial semiconductor doping.