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Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3films
Yang Chen1, Haoming Wei1, Mingxu Wang1
1School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu, 273165, Shandong, People's Republic of China.
Abstract:
In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO3(BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109° DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15μA cm-2and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.
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