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Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

MOSFET Amplifiers

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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MOSFET: Enhancement Mode

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Related Experiment Video

Updated: Oct 22, 2025

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

4K-memristor analog-grade passive crossbar circuit.

H Kim^1,2, M R Mahmoodi¹, H Nili¹

¹Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA.

Nature Communications

|September 1, 2021

Summary

This study presents a high-density passive memristive crossbar circuit for neuromorphic chips, achieving high functional memristor yield and low device variation for efficient neural network storage and processing.

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Last Updated: Oct 22, 2025

A Method for Growing Bio-memristors from Slime Mold

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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

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Published on: March 9, 2019

Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Passive analog-grade memristive crossbar circuits offer superior density for on-chip neural network storage, reducing off-chip communication costs.
Low memristor variation is critical for efficient operation in neuromorphic systems.

Purpose of the Study:

To develop and characterize a high-performance passive memristive crossbar circuit suitable for large-scale neuromorphic applications.
To demonstrate the feasibility of using such circuits for accurate neural network computations.

Main Methods:

Fabrication of a 64x64 passive crossbar circuit using a foundry-compatible, low-temperature process with etch-down patterning.
Characterization of memristor nonvolatility, switching voltage variation, and analog properties.
Experimental demonstration of vector-by-matrix multiplication and modeling of neural network classifiers.

Main Results:

Achieved ~99% functional nonvolatile metal-oxide memristors with a coefficient of variance in switching voltages below 26%.
Successfully programmed a 4K-pixel gray-scale pattern with <4% average tuning error.
Demonstrated 64x10 vector-by-matrix multiplication with 1% average relative conductance import accuracy, modeling MNIST image classification.

Conclusions:

The developed passive crossbar circuit meets the stringent requirements for neuromorphic computing, enabling efficient on-chip storage and processing of large neural network models.
The low device variation and high functionality pave the way for practical, large-scale neuromorphic systems with improved performance and reduced power consumption.